inchange semiconductor isc product specification isc silicon npn power transistor 2SC2616 description high collector-emitter sustaining voltage- : v ceo(sus) = 400v (min) high switching speed applications designed for high voltage, high speed and high power switching applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b b base current-continuous 5 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2616 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustainig voltage i c = 0.2a; r be = ; l= 100mh 400 v v cex(sus) collector-emitter sustainig voltage i c = 5a; i b1 =-i b2 = 1a, v be = -5v; l=180 h,clamped 400 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.2 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.7 v h fe-1 dc current gain i c = 5a; v ce = 5v 15 h fe-2 dc current gain i c = 10a; v ce = 5v 7 i cbo collector cutoff current v cb = 400v; i e = 0 0.1 ma i ceo collector cutoff current v ce = 350v; r be = 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma switching times t r rise time 1.0 s t stg storage time 2.5 s t f fall time i c = 10a; i b1 = -i b2 = 2a, v cc 150v 1.0 s isc website www.iscsemi.cn
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